Home Page of Dr. Oleg Rubel

Book contributions

Springer cover
Description of charge transport in disordered organic materials (Chap. 3)
by S.D. Baranovskii, O. Rubel, F. Jansson, and R. Österbacka
in Advances in polymer science: Organic Electronics
edited by G. Meller and T. Grasser
Springer (Berlin-Heidelberg, 2010)
pp. 45-71
http://www.springer.com/... , table of content (pdf)
Wiley cover
Description of charge transport in amorphous semiconductors (Chap. 2) and
Description of charge transport in disordered organic materials (Chap. 5)
by S. Baranovski and O. Rubel
in Charge transport in disordered solids with applications in electronics
edited by S. Baranovski
John Wiley & Sons (Chichester, England, 2006)
pp. 49-96, 221-266
http://www.wiley-vch.de/... , table of content (pdf)
Springer cover
Description of charge transport in disordered materials (Chap. 9)
by S. Baranovski and O. Rubel
in Springer Handbook of Electronic and Photonic Materials
edited by S. Kasap and P. Capper
Springer (2006)
pp. 161-186
http://www.springer.com/...

Articles

Charge carrier transport in disordered semiconductors:

> 
Interaction of hot carriers with optical phonons in Selenium

AUTOR(s): 

A. Darbandi and O. Rubel

JOURNAL:

J. Non-Cryst. Solids

VOL:

XX

YEAR:

2011

PAGES:

XXXXX

LINK:

abstract

> 
Generalized lucky-drift model for impact ionization in semiconductors with disorder

AUTOR(s):

O. Rubel, A. Potvin, and D. Laughton

JOURNAL:

J. Phys.: Condens. Matter

VOL:

23

YEAR:

2011

PAGES:

055802

LINK:

abstract , full text (pdf)

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Lone-pair states as a key to understanding impact ionization in chalcogenide semiconductors

AUTOR(s):

O. Rubel and D. Laughton

JOURNAL:

J. Phys.: Condens. Matter

VOL:

22

YEAR:

2010

PAGES:

355803

LINK:

abstract , full text (pdf)

> 
Reversible vs irreversible photodarkening in a-Se: the kinetics study

AUTOR(s):

A. Reznik, S. D. Baranovskii, M. Klebanov, V. Lyubin, O. Rubel, J. A. Rowlands

JOURNAL:

J. Mater. Sci: Mater. Electron.

VOL:

20

YEAR:

2009

PAGES:

S111

LINK:

abstract , full text (pdf)

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Lucky-drift model for impact ionization in amorphous semiconductors

AUTOR(s):

K. Jandieri, O. Rubel, S. D. Baranovskii, A. Reznik, J. A. Rowlands, and S. O. Kasap

JOURNAL:

J. Mater. Sci: Mater. Electron.

VOL:

20

YEAR:

2009

PAGES:

S221

LINK:

abstract , full text (pdf)

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Resonant electron tunneling through defects in GaAs tunnel diodes

AUTOR(s):

K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, A. W. Bett

JOURNAL:

J. Appl. Phys.

VOL:

104

YEAR:

2008

PAGES:

094506

LINK:

abstract , full text (pdf)

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Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes

AUTOR(s):

K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett

JOURNAL:

Appl. Phys. Lett.

VOL:

92

YEAR:

2008

PAGES:

243504

LINK:

abstract , full text (pdf)

> 
Exact solution for hopping dissociation of germinate electron hole pairs in a disordered chain

AUTOR(s):

O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard

JOURNAL:

Phys. Rev. Lett.

VOL:

100

YEAR:

2008

PAGES:

196602

LINK:

abstract , full text (pdf)

> 
Avalanche multiplication in amorphous selenium and its utilization in imaging

AUTOR(s):

A. Reznik, S.D. Baranovskii, O. Rubel, K. Jandieri, S.O. Kasap, Y. Ohkawa, M. Kubota, K. Tanioka, J.A. Rowlands

JOURNAL:

J. Non-Cryst. Solids

VOL:

354

YEAR:

2008

PAGES:

2691

LINK:

abstract

> 
Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon

AUTOR(s):

A. Reznik, S. D. Baranovskii, O. Rubel, G. Juska, S. O. Kasap, Y. Ohkawa, K. Tanioka, and J. A. Rowlands

JOURNAL:

J. Appl. Phys.

VOL:

102

YEAR:

2007

PAGES:

053711

LINK:

abstract , full text (pdf)

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Kinetics of the photostructural changes in a-Se films

AUTOR(s):

A. Reznik, B. J. M. Lui, J. A. Rowlands, S. D. Baranovskii, O. Rubel, V. Lyubin, M. Klebanov, S. O. Kasap, Y. Ohkawa, T. Matsubara, K. Miyakawa, M. Kubota, K. Tanioka, and T. Kawai

JOURNAL:

J. Appl. Phys.

VOL:

100

YEAR:

2006

PAGES:

113506

LINK:

abstract , full text (pdf)

> 
On the concentration and field dependence of the hopping mobility in disordered organic solids

AUTOR(s):

S.D. Baranovskii, O. Rubel, and P. Thomas

JOURNAL:

J. Non-Cryst. Solids

VOL:

352

YEAR:

2006

PAGES:

1644

LINK:

abstract , full text (pdf)

> 
Theoretical description of hopping transport in disordered materials

AUTOR(s):

S.D. Baranovskii, O. Rubel, and P. Thomas

JOURNAL:

Thin Solid Films

VOL:

487

YEAR:

2005

PAGES:

2-7

LINK:

abstract , full text (pdf)

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On description of coulomb effects caused by doping in amorphous and disordered organic semiconductors

AUTOR(s):

S.D. Baranovskii, O. Rubel, and P. Thomas

JOURNAL:

J. Optoelectron. Adv. M.

VOL:

7

YEAR:

2005

PAGES:

1929-1933

LINK:

full text (pdf)

> 
Concentration dependence of the hopping mobility in disordered organic solids

AUTOR(s):

O. Rubel, S. D. Baranovskii, P. Thomas, and S. Yamasaki

JOURNAL:

Phys. Rev. B

VOL:

69

YEAR:

2004

PAGES:

014206

LINK:

abstract , full text (pdf)

> 
Lucky-drift model for avalanche multiplication in amorphous semiconductors

AUTOR(s):

O. Rubel, S. D. Baranovskii, I. P. Zvyagin, P. Thomas, and S. O. Kasap

JOURNAL:

Phys. Status Solidi C

VOL:

1

YEAR:

2004

PAGES:

1186-1193

LINK:

abstract , full text (pdf)

Q.
A.

Structural properties of compound semiconductors:

> 
Bulk properties of α-PbO from first-principle self-consistent calculations

AUTOR(s): 

O. Rubel and A. Potvin

JOURNAL:

AIP Conf. Proc.

VOL:

1368

YEAR:

2011

PAGES:

85

LINK:

abstract, full text (pdf)

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Atomic scale annealing effects on InxGa1-xNyAs1-y studied by TEM three-beam imaging

AUTOR(s):

K. Müller, M. Schowalter, A. Rosenauer, H. Dongzhi, D.M. Schaadt, M. Hetterich, P. Gilet, O. Rubel, R. Fritz, and K. Volz

JOURNAL:

Phys. Rev. B

VOL:

81

YEAR:

2010

PAGES:

075315

LINK:

abstract , full text (pdf)

> 
Effect of bonding and static atomic displacements on composition quantification in InxGa1-xNyAs1-y

AUTOR(s):

K. Müller, M. Schowalter, A. Rosenauer, O. Rubel, and K. Volz

JOURNAL:

Phys. Rev. B

VOL:

81

YEAR:

2010

PAGES:

075315

LINK:

abstract , full text (pdf)

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Formation energies of antiphase boundaries in GaAs and GaP: an ab initio study

AUTOR(s):

O. Rubel and S.D. Baranovskii

JOURNAL:

Int. J. Mol. Sci.

VOL:

10

YEAR:

2009

PAGES:

5104-5114

LINK:

abstract , full text (pdf)

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Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing

AUTOR(s):

K. Volz, T. Torunski, O. Rubel, and W. Stolz

JOURNAL:

J. Appl. Phys.

VOL:

104

YEAR:

2008

PAGES:

053504

LINK:

abstract , full text (pdf)

> 
Modeling the compositional dependence of electron diffraction in dilute GaAs- and GaP-based compound semiconductors

AUTOR(s):

O. Rubel, I. Németh, W. Stolz, and K. Volz

JOURNAL:

Phys. Rev. B

VOL:

78

YEAR:

2008

PAGES:

075207

LINK:

abstract, full text (pdf)

> 
Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells

AUTOR(s):

K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer

JOURNAL:

J. Appl. Phys.

VOL:

102

YEAR:

2007

PAGES:

083504

LINK:

abstract, full text (pdf)

> 
Material development for improved 1 eV (GaIn)(NAs) solar cell structures

AUTOR(s):

K. Volz, T. Torunski, D. Lackner, O. Rubel, W. Stolz, C. Baur, S. Müller, F. Dimroth, and A. W. Bett

JOURNAL:

J. Sol. Energy. Eng.

VOL:

129

YEAR:

2007

PAGES:

266

LINK:

abstract, full text (pdf)

> 
Model of annealing-induced short-range order effects in (GaIn)(NP) alloys

AUTOR(s):

O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz, and W. Stolz

JOURNAL:

Phys. Rev. B

VOL:

74

YEAR:

2006

PAGES:

195206

LINK:

abstract, full text (pdf)

> 
Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor calculation

AUTOR(s):

K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, and W. Stolz

JOURNAL:

Appl. Phys. Lett.

VOL:

88

YEAR:

2006

PAGES:

081910

LINK:

abstract, full text (pdf)

> 
Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys

AUTOR(s):

O. Rubel, K. Volz, T. Torunski, S. D. Baranovskii, F. Grosse, and W. Stolz

JOURNAL:

Appl. Phys. Lett.

VOL:

85

YEAR:

2004

PAGES:

5908

LINK:

abstract, full text (pdf), erratum (pdf)

> 
Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance

AUTOR(s):

K. Volz, T. Torunski, B. Kunert, O. Rubel, S. Nau, S. Reinhard, and W. Stolz

JOURNAL:

J. of Crystal Growth

VOL:

272

YEAR:

2004

PAGES:

739

LINK:

abstract, full text (pdf)

Q.
A.

Characterization of disordered semiconductors and heterostructures:

> 
Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging

AUTOR(s): 

T. Grieb, K. Müller, O. Rubel, R. Fritz, C. Gloistein, N. Neugebohrn, M. Schowalter, K. Volz and A. Rosenauer

JOURNAL:

J. Phys.: Conf. Ser.

VOL:

326

YEAR:

2011

PAGES:

012033

LINK:

abstract, full text (pdf)

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Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing

AUTOR(s): 

R. Imlau, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz and A. Rosenauer

JOURNAL:

J. Phys.: Conf. Ser.

VOL:

326

YEAR:

2011

PAGES:

012038

LINK:

abstract, full text (pdf)

> 
Luminescence dynamics in Ga(AsBi)

AUTOR(s):

S. Imhof, A. Wagner, A. Thränhardt, A. Chernikov, M. Koch, N. S. Köster, S. Chatterjee, M. Koch, S. W. Koch, O. Rubel, X. F. Lu, S. R. Johnson, D. A. Beaton, and T. Tiedje

JOURNAL:

Appl. Phys. Lett.

VOL:

98

YEAR:

2011

PAGES:

161104

LINK:

abstract, full text (pdf)

> 
Evidence of two disorder scales in Ga(AsBi)

AUTOR(s):

S. Imhof, A. Wagner, A. Chernikov, M. Koch, K. Kolata, N. S. Köster, S. Chatterjee, M. Koch, S. W. Koch, X. F. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, O. Rubel, and A. Thränhardt

JOURNAL:

Phys. Status Solidi B

VOL:

248

YEAR:

2011

PAGES:

851

LINK:

abstract, full text (pdf)

> 
Clustering Effects in Ga(AsBi)

AUTOR(s):

S. Imhof, A. Thränhardt, A. Chernikov, M. Koch, N. S. Köster, S. Chatterjee, S. W. Koch, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, and O. Rubel

JOURNAL:

Appl. Phys. Lett.

VOL:

96

YEAR:

2010

PAGES:

131115

LINK:

abstract, full text (pdf)

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Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems

AUTOR(s):

C. Bückers, E. Kühn, C. Schlichenmaier, S. Imhof, A. Thränhardt, J. Hader, J. V. Moloney, O. Rubel, W. Zhang, T. Ackemann, S. W. Koch

JOURNAL:

Phys. Status Solidi B

VOL:

247

YEAR:

2010

PAGES:

789 - 808

LINK:

abstract, full text (pdf)

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Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)

AUTOR(s):

T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar, and J. F. Geisz

JOURNAL:

J. Phys.: Condens. Matter

VOL:

20

YEAR:

2008

PAGES:

015217

LINK:

abstract, full text (pdf)

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Spectral dependence of the photoluminescence decay in disordered semiconductors

AUTOR(s):

O. Rubel, W. Stolz, and S. D. Baranovskii

JOURNAL:

Appl. Phys. Lett.

VOL:

91

YEAR:

2007

PAGES:

021903

LINK:

abstract, full text (pdf)

> 
Relaxation and recombination in InAs quantum dots

AUTOR(s):

P. Dawson, E. O. Göbel, K. Pierz, O. Rubel, S. D. Baranovskii, and P. Thomas

JOURNAL:

Phys. Status Solidi B

VOL:

244

YEAR:

2007

PAGES:

2803

LINK:

abstract, full text (pdf)

> 
Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: theory and experiment

AUTOR(s):

O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, and W. Stolz

JOURNAL:

J. Lumin.

VOL:

127

YEAR:

2007

PAGES:

285

LINK:

abstract

> 
Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment

AUTOR(s):

O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Rühle, P. Thomas, K. Volz, and W. Stolz

JOURNAL:

Phys. Rev. B

VOL:

73

YEAR:

2006

PAGES:

233201

LINK:

abstract, full text (pdf)

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Nature and dynamics of carrier escape from InAs/GaAs quantum dots

AUTOR(s):

O. Rubel, P. Dawson, S. D. Baranovskii, K. Pierz, P. Thomas, and E. O. Göbel

JOURNAL:

Phys. Status Solidi C

VOL:

3

YEAR:

2006

PAGES:

2397

LINK:

abstract, full test (pdf)

> 
Non-radiative recombination of optical excitations in (GaIn)(NAs) quantum wells

AUTOR(s):

O. Rubel, S. D. Baranovskii, K. Hantke, W. W. Rühle, P. Thomas, K. Volz, and W. Stolz

JOURNAL:

Phys. Status Solidi C

VOL:

3

YEAR:

2006

PAGES:

2481

LINK:

abstract, full text (pdf)

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Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy

AUTOR(s):

O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, and W. Stolz

JOURNAL:

J. Appl. Phys.

VOL:

98

YEAR:

2005

PAGES:

063518

LINK:

abstract, full text (pdf)

> 
Temperature dependent optical properties of InAs/GaAs quantum dots: independent carrier relaxation versus exciton

AUTOR(s):

P. Dawson, O. Rubel, S. D. Baranovskii, K. Pierz, P. Thomas, and E. O. Göbel

JOURNAL:

Phys. Rev. B

VOL:

72

YEAR:

2005

PAGES:

235301

LINK:

abstract, full text (pdf)

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On the theoretical description of photoluminescence in disordered quantum structures

AUTOR(s):

O. Rubel, S.D. Baranovskii, K. Hantke, J.D. Heber, J. Koch, P. Thomas, J.M. Marshall, W. Stolz, and W.W. Rühle

JOURNAL:

J. Optoelectron. Adv. M.

VOL:

7

YEAR:

2005

PAGES:

115

LINK:

full text (pdf)

> 
Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells

AUTOR(s):

H. Grüning, K. Kohary, S. D. Baranovskii, O. Rubel, P.J. Klar, A. Ramakrishnan, G. Ebbinghaus, P. Thomas, W. Heimbrodt, W. Stolz, and W.W. Rühle

JOURNAL:

Phys. Status Solidi C

VOL:

1

YEAR:

2004

PAGES:

109

LINK:

abstract, full text (pdf)

Q.
A.

© by O. Rubel